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DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D891 BAS16L High-speed diode Product specification 2003 Jun 23 Philips Semiconductors High-speed diode Product specification BAS16L FEATURES • High switching speed: max. 4 ns • Continuous reverse voltage: max. 75 V • Repetitive peak rev
BAS16TT1 Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS (TA = 25°C) Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol VR IF IFM(surge) Max 75 200 500 Unit V mA mA 3 CATHODE 1 ANODE Preferred Device
ADVANCED INFORMATION Features Fast Switching Speed High Reverse Breakdown Voltage Low Leakage Current Low Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Re
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere APPLICATION * Ultra high speed switching * For general purpose switching application BAS16VTWPT FEATURE * Small surface mounting type. (SOT-563) * High speed. (TRR= 1.5nSec
BAS16TDW MMBD4148TDW Surface Mount Switching Multi-Chip Diode Array P b Lead(Pb)-Free MULTI-CHIP DIODES 150m AMPERES 75 VOLTS Features: * Fast Switching Speed * Ultra-Small Surface Mount Package * For General Purpose Switching Applications * High Conductance Power Dissipation
CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT SWITCHING DIODE VOLTAGE 100 Volts CURRENT 0.15 Ampere APPLICATION * Ultra high speed switching BAS16VPT FEATURE * Small surface mounting type. (SOT-563) * High speed. (TRR=1.5nSec Typ.) * Suitable for high packing density. (1) SOT-563
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