BAS11
NXP Semiconductors
Controlled avalanche rectifiersDISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D122
BAS11; BAS12 Controlled avalanche rectifiers
Product specification Supersedes data of April 1996 1996 Sep 26
Philips Semiconductors
Product specification
Controlled avalanche rectifiers
FEATURES
BAS116
SEMTECH
LOW LEAKAGE SWITCHING DIODEBAS116
LOW LEAKAGE SWITCHING DIODE
Features • Plastic SMD package • Low leakage current • High switching speed
Application • Low leakage current applications in
surface mounted circuits.
3
12
Marking Code: JV SOT-23 Plastic Package
Absolute Maximum
BAS116
Pan Jit International
LOW LEAKAGE SWITCHING DIODESBAS116/BAW156/BAV170/BAV199
SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES
VOLTAGE 100 Volts
POWER 250mWatts
FEATURES
• Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 2p
BAS116
NXP Semiconductors
Low-leakage diodeDISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BAS116 Low-leakage diode
Product specification Supersedes data of 1996 Mar 13 1999 May 26
Philips Semiconductors
Product specification
Low-leakage diode
FEATURES • Plastic SMD package • Low l
BAS116
Infineon Technologies AG
Silicon Low Leakage DiodeBAS116...
Silicon Low Leakage Diode • Low-leakage applications • Medium speed switching times
BAS116
3
1
2
Type BAS116
Parameter
Package SOT23
Configuration single
Symbol VR VRM IF I FSM Value
Marking JVs
Unit
Maximum Ratings at TA = 25°C, unless
BAS116
Siemens Semiconductor Group
Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode)Silicon Low Leakage Diode
Low-leakage applications q Medium speed switching times q Single diode
q
BAS 116
Type BAS 116
Marking JVs
Ordering Code (tape and reel) Q62702-A919
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Pe
BAS116
CDIL
SILICON PLANAR SWITCHING DIODEContinental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR SWITCHING DIODE
3 Pin Configuration 1 = ANODE 2 = NC 3 = CATHODE
12
BAS116
SOT-23 Formed SMD Package
Marking BAS116 =JV
Low Leakage Applications
ABSOLUT
BAS116
Taiwan Semiconductor
SMD Switching DiodeSmall Signal Product
BAS116
Taiwan Semiconductor
225mW, SMD Switching Diode
FEATURES
- Low power loss, high current capability, low VF - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin (Sn) lead finish with
Nickel (Ni) under plate -