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Datasheet B601 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | B601 | PNP Transistor - 2SB601
DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector |
 NEC |
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| 3 | B6010D | N-Channel 60-V (D-S) MOSFET N-Channel 60-V (D-S) MOSFET
B6010D
General Description
The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are |
 BiTEK |
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| 2 | B6010K | N-Channel 60-V (D-S) MOSFET N-Channel 60-V (D-S) MOSFET
B6010K
General Description
The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are |
BiTEK |
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| 1 | B6010S | Single N-Channel 60-V (D-S) MOSFET B6010S
Single N-Channel 60-V (D-S) MOSFET
General Description
The B6010S is the Single N-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to 60V operation voltage is well suited in switching mode power sup |
BiTEK |
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