B1240L 전자부품 데이터시트

Transistors 2SB1260 / 2SB1181 / 2SB1241 Power Transistor (−80V, −1A) 2SB1260 / 2SB1181 / 2SB1241 5.5−+00..13 1.5±0.3 0.9 1.5 2.5 9.5±0.5 !Features 1) High breakdown voltage and high current. BVCEO= −80V, IC=−1A 2) Good hFE linearity. 3) Low VCE(sat). 4) Complements the 2SD1898 / 2SD1

Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FExternal dimensions (Unit: mm)

2SB1188 / 2SB1182 / 2SB1240 Transistors Medium power transistor (−32V, −2A) 2SB1188 / 2SB1182 / 2SB1240 !Features 1) Low VCE(sat). VCE(sat) = −0.5V (Typ.) (IC/IB = −2A / −0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 !External dimensions (Units : mm) 2SB1188 0.

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitaxial planar type PNP silicon transistor FExternal dimensions (Units: mm