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Datasheet B1015 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | B1015 | PNP Transistor, 2SB1015 Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
| Toshiba Semiconductor | data |
2 | B1015A | PNP Transistor, 2SB1015A TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1015A
2SB1015A
Audio Frequency Power Amplifier Applications
· Low collector saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A)
· Collector power dissipation: PC = 25 W (Tc = 25°C)
Maximum Ratings (Ta = 25°C)
Cha | Toshiba Semiconductor | data |
B10 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | B10011S | CAN TRANSCEIVER IC Features
• Capability of Single-wire Operation • Hardware Fault Recognition • Inputs with High Common-mode and Differential-mode Interference Rejection Above
100 VPP due to External Filters at the Receiver Input
• Immunity Against Electromagnetic Interference • Immunity Against Ground-vol ATMEL Corporation transceiver | | |
2 | B1007 | PNP Transistor, 2SB1007 SavantIC Semiconductor
Silicon PNP Power Transistors
DESCRIPTION ·With TO-126 package ·Complement to type 2SD1378 ·High breakdown voltage
APPLICATIONS ·Low frequency power amplification
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Produ SavantIC data | | |
3 | B1008 | Epitaxial Planar PNP Silicon Transistor ROHM Semiconductor transistor | | |
4 | B100NF04L | STB100NF04L
N-CHANNEL 40V - 0.0036 Ω - 100A D2PAK STripFET™ II POWER MOSFET
TYPE STB100NF04L
s s s s
STB100NF04L
VDSS 40 V
RDS(on) <0.0042Ω
ID 100 A
TYPICAL RDS(on) = 0.0036 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE
3 1
DESCRIPTION This Power MOSFET is the STMicroelectronics data | | |
5 | B100xxL | Led Display Master Green ETC data | | |
6 | B1010 | PNP Silicon Transistor ROHM Semiconductor transistor | | |
7 | B1011 | PNP Transistor, 2SB1011 Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
8.0+0.5 –0.1
Unit: mm
3.2±0.2
■ Features
• High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC Panasonic Semiconductor data | |
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Número de pieza | Descripción | Fabricantes | |
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