AO4406
Alpha Industries
N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTORMarch 2002
AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent h
AO4406
Alpha & Omega Semiconductors
N-Channel Enhancement Mode Field Effect TransistorAO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device makes an excellent high side s
AO4406
Freescale
N-Channel MOSFETFreescale
AO4406/MC4406
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and p
AO4406A
Alpha & Omega Semiconductors
N-Channel MOSFETAO4406A
30V N-Channel MOSFET
General Description
The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
Product Summary
VDS ID (at
AO4406A
Freescale
N-Channel MOSFETAO4406A
30V N-Channel MOSFET
General Description
The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
Features
VDS ID (at VGS=10V
AO4406AL
Alpha & Omega Semiconductors
N-Channel Enhancement Mode Field Effect TransistorAO4406AL N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose application