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AO3438 전자부품 데이터시트



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AO3438  

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO3438

N-Channel MOSFET

AO3438 20V N-Channel MOSFET General Description The AO3438 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.




관련 부품 AO34 상세설명

AO3414  

  
N-Channel Enhancement Mode Field Effect Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3414 AO3414 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable



Tuofeng Semiconductor
Tuofeng Semiconductor

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AO3402  

  
N-Channel MOSFET

FEATURES The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-



HOTTECH
HOTTECH

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AO3402  

  
N-Channel Enhancement Mode Field Effect Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402 AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable



Tuofeng Semiconductor
Tuofeng Semiconductor

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AO3460  

  
N-Channel MOSFET

AO3460 60V N-Channel MOSFET General Description The AO3460 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low



Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

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AO3409  

  
P-CHANNEL MOSFET

AO3409 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features VDS (V) = -30V ID = -2.6 A(VGS= -10V) RDS(ON) < 110mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.5V) 用途 / Applications 适用



BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS

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AO3409  

  
30V P-Channel MOSFET

AO3409 30V P-Channel MOSFET General Description Product Summary The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)



Oucan Semi
Oucan Semi

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