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Datasheet AO3402 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | AO3402 | N-Channel Enhancement Mode Field Effect Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
AO3402
AO3402 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable |
 Tuofeng Semiconductor |
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| 6 | AO3402 | N-Channel MOSFET FEATURES
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.
Plastic-Encapsulate Mosfets
AO3402
N-Channel MOSFET
D
G S
1.Gate 2.Source 3.Drain
SOT- |
 HOTTECH |
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| 5 | AO3402 | N-Channel Enhancement Mode Field Effect Transistor SMD Type
N-Channel Enhancement Mode Field Effect Transistor AO3402 (KO3402)
MOSFIECT
Features
VDS (V) = 30V ID = 4 A RDS(ON) 55m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V) RDS(ON) 110m (VGS = 2.5V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12 0.95 +0.1
-0.1
1.9 +0.1 -0.1
0-0.1 +0.10.38
-0.1
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 Kexin |
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| 4 | AO3402 | N-CHANNEL MOSFET AO3402
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
VDS (V) = 30V ID = 4 A (VGS = 10V) RDS(ON) < 55mΩ (VGS = 10V) RDS(ON) < 70mΩ (VGS = 4.5V) RDS(ON) < 110mΩ (VGS = 2.5V)
用� |
 BLUE ROCKET ELECTRONICS |
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