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FEATURES The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402 AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable
AO3409 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features VDS (V) = -30V ID = -2.6 A(VGS= -10V) RDS(ON) < 110mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.5V) 用途 / Applications 适用
AO3409 30V P-Channel MOSFET General Description Product Summary The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)
30V P-Channel Enhancement Mode MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) AO3409 SOT-23-3L D GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Mi
Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=
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