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AO3401A 전자부품 데이터시트



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AO3401A  

Alpha & Omega Semiconductors
Alpha & Omega Semiconductors

AO3401A

P-Channel Enhancement Mode Field Effect Transistor

AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate voltages as low as 2.5V. This device is suitable f




관련 부품 AO340 상세설명

AO3402  

  
N-Channel MOSFET

FEATURES The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-



HOTTECH
HOTTECH

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AO3402  

  
N-Channel Enhancement Mode Field Effect Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402 AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable



Tuofeng Semiconductor
Tuofeng Semiconductor

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AO3409  

  
P-CHANNEL MOSFET

AO3409 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 P 道 MOS 场效应管。P- CHANNEL MOSFET in a SOT-23 Plastic Package. 特征 / Features VDS (V) = -30V ID = -2.6 A(VGS= -10V) RDS(ON) < 110mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.5V) 用途 / Applications 适用



BLUE ROCKET ELECTRONICS
BLUE ROCKET ELECTRONICS

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AO3409  

  
30V P-Channel MOSFET

AO3409 30V P-Channel MOSFET General Description Product Summary The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V)



Oucan Semi
Oucan Semi

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AO3409  

  
30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) AO3409 SOT-23-3L D GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Mi



JinYu
JinYu

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AO3409  

  
P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=



HOTTECH
HOTTECH

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