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AO22 전자부품 데이터시트



AO22 전자부품 회로 및
기능 검색 결과



AO22  

AMS
AMS

AO22

AND / OR circuit

R Austria Mikro Systeme International AO22 CUB 0.6 µm CMOS AO22 is an AND / OR circuit providing the logical function Q = (A.B+C.D). A L X L X H X B X L X L H X C L L X X X H D X X L L X H Q L L L L H H A B Q C D AO22 Ci (pF) A B C D 0.048 0.042 0.0




관련 부품 AO 상세설명

AO-09648  

  
LCD_Module

AO-09648A FEATURE 1.Construction : LCD panel and FPC. 2.Display type:FSTN, Transflective, Positive, 6 o’clock view . 3.Controller:S1D10606 96 x 48 dots 1/49 Duty BLOCK DIAGRAM ELECTRICAL CHARACTERISTICS Parameter LCD Driving Voltage Supply Current Symbol VLCD IDD Condition 25oC 25oC Typ.Value



ETC
ETC

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AO3402  

  
N-Channel Enhancement Mode Field Effect Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402 AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable



Tuofeng Semiconductor
Tuofeng Semiconductor

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AO3402  

  
N-Channel MOSFET

FEATURES The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-



HOTTECH
HOTTECH

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AO3407  

  
P-Channel Enhancement Mode Field Effect Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3407 AO3407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applicati



Tuofeng Semiconductor
Tuofeng Semiconductor

PDF



AO3409  

  
P-Channel MOSFET

Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=



HOTTECH
HOTTECH

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AO3409  

  
30V P-Channel Enhancement Mode MOSFET

30V P-Channel Enhancement Mode MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) AO3409 SOT-23-3L D GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Mi



JinYu
JinYu

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