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AO-09648A FEATURE 1.Construction : LCD panel and FPC. 2.Display type:FSTN, Transflective, Positive, 6 o’clock view . 3.Controller:S1D10606 96 x 48 dots 1/49 Duty BLOCK DIAGRAM ELECTRICAL CHARACTERISTICS Parameter LCD Driving Voltage Supply Current Symbol VLCD IDD Condition 25oC 25oC Typ.Value
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3402 AO3402 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable
FEATURES The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications. Plastic-Encapsulate Mosfets AO3402 N-Channel MOSFET D G S 1.Gate 2.Source 3.Drain SOT-
Shenzhen Tuofeng Semiconductor Technology Co., Ltd AO3407 AO3407 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3407 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applicati
Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G S AO3409 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=
30V P-Channel Enhancement Mode MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) AO3409 SOT-23-3L D GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Mi
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