Datasheet AGR18060E Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	AGR18060E	Lateral MOSFET AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communicati	TriQuint Semiconductor

AGR180 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
AGR18090E	Transistor Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile com	TriQuint Semiconductor
AGR18060E	Lateral MOSFET AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system fo	TriQuint Semiconductor
AGR18045E	Lateral MOSFET AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), e	TriQuint Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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