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Datasheet AGR09045E Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 AGR09045E   Lateral MOSFET

AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global sys
 PEAK electronics
PEAK electronics		 datasheet AGR09045E pdf

AGR090 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
AGR09030E

Lateral MOSFET

AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global syst
 TriQuint Semiconductor
TriQuint Semiconductor		 datasheet pdf - TriQuint Semiconductor
AGR09045E

Lateral MOSFET

AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple acces
 PEAK electronics
PEAK electronics		 datasheet pdf - PEAK electronics
AGR09090EF

Lateral MOSFET

AGR09090EF 90 W, 865 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09090EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global system for mobile communication (GSM), enhanced data fo
 TriQuint Semiconductor
TriQuint Semiconductor		 datasheet pdf - TriQuint Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

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