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Datasheet AFT05MS004NT1 Equivalent ( PDF )

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1 AFT05MS004NT1   RF Power LDMOS Transistor

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for l
Freescale Semiconductor
Freescale Semiconductor
datasheet AFT05MS004NT1 pdf

AFT05MS004 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
AFT05MS004NT1

RF Power LDMOS Transistor

Freescale Semiconductor Technical Data RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device
Freescale Semiconductor
Freescale Semiconductor
datasheet pdf - Freescale Semiconductor


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