A2070
Toshiba Semiconductor
PNP Transistor - 2SA2070TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2070
High-Speed Switching Applications DC-DC Converter Applications
2SA2070
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = -0.1 A) • Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (
A20M18LVFR
POWER MOS V FREDFETAPT20M18B2VFR A20M18LVFR
200V 100A 0.018Ω
POWER MOS V® FREDFET
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw
Advanced Power Technology
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A2077
Silicon PNP epitaxial planar type TransistorsTransistors
2SA2077
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC5845
■ Features • High forward current transfer ratio hFE • Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine packing.
Panasonic
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A2028
PNP Transistor - 2SA2028Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SA2028
Silicon PNP epitaxial planar type
Productnnua to 0.1 0.9±0.1 0.9–+00..12
For DC-DC converter
■ Features • Low collector-emitter saturation voltage VCE(sat) • High-speed switching • S-Mini type package,
Panasonic
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