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Datasheet A-GA10JT12 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | A-GA10JT12 | Super Junction Transistor Device under development
A-GA10JT12
Normally – OFF Silicon Carbide Super Junction Transistor
VDS I
D
RDS(ON)
= 1200 V
= 7A = 220 mȍ
Features
• 225 oC maximum operating temperature •Best in class temperature independent switching
and blocking performance • Lowest VDS(ON) as compared to |
 GeneSiC |
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A-GA10J Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| A-GA10JT12 | Super Junction Transistor |
GeneSiC |
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