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M FEATURES 93LC46/56/66 BLOCK DIAGRAM VCC VSS 1K/2K/4K 2.0V Microwire® Serial EEPROM • Single supply with programming operation down to 2.0V (Commercial only) • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • ORG pin selectable memory con
M FEATURES 93LC46/56/66 BLOCK DIAGRAM VCC VSS 1K/2K/4K 2.0V Microwire® Serial EEPROM • Single supply with programming operation down to 2.0V (Commercial only) • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • ORG pin selectable memory con
M FEATURES 93LC46/56/66 BLOCK DIAGRAM VCC VSS 1K/2K/4K 2.0V Microwire® Serial EEPROM • Single supply with programming operation down to 2.0V (Commercial only) • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • ORG pin selectable memory con
M FEATURES 93LC46/56/66 BLOCK DIAGRAM VCC VSS 1K/2K/4K 2.0V Microwire® Serial EEPROM • Single supply with programming operation down to 2.0V (Commercial only) • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • ORG pin selectable memory con
M FEATURES 93LC46/56/66 BLOCK DIAGRAM VCC VSS 1K/2K/4K 2.0V Microwire® Serial EEPROM • Single supply with programming operation down to 2.0V (Commercial only) • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • ORG pin selectable memory con
M FEATURES 93LC46/56/66 BLOCK DIAGRAM VCC VSS 1K/2K/4K 2.0V Microwire® Serial EEPROM • Single supply with programming operation down to 2.0V (Commercial only) • Low power CMOS technology - 1 mA active current typical - 5 µA standby current (typical) at 3.0V • ORG pin selectable memory con
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PartNumber.co.kr | 2020 | 연락처 |