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Datasheet 8N80C Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 8N80C   FQP8N80C

FQP8N80C / FQPF8N80C / FQPF8N80CYDTU — N-Channel QFET® MOSFET December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET® MOSFET 800 V, 8.0 A, 1.55 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar str
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet 8N80C pdf

8N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
8N60C

FQB8N60C

Datasheet.es FQB8N60C / FQI8N60C QFET FQB8N60C / FQI8N60C 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has
Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
8N50NZ

N-Channel MOSFET

FDP8N50NZ / FDPF8N50NZ — N-Channel UniFETTM II MOSFET FDP8N50NZ / FDPF8N50NZ N-Channel UniFETTM II MOSFET 500 V, 8 A, 850 m October 2013 Features • RDS(on) = 770 m (Typ.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 14 nC) • Low Crss (Typ. 5 pF) • 100% Ava
 Fairchild Semiconductor
Fairchild Semiconductor		 datasheet pdf - Fairchild Semiconductor
8N60

N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 8N60 ·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Spec
 Inchange
Inchange		 datasheet pdf - Inchange


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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