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8N65(F,B,H) 8A mps,650 Volts N-CHANNEL MOSFET FEATURE 8A,650V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 8N65 ITO-220AB 8N65F TO-263 8N65B TO-262 8N65H Absolute Maximum Ratings(TC=25℃,unl
8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE 8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 8N60 ITO-220AB 8N60F TO-263 8N60B TO-262 8N60H Absolute Maximum Ratings(TC=25℃,unl
SEMICONDUCTOR 8N60 Series RRooHHSS Nell High Power Products DESCRIPTION N-Channel Power MOSFET (8A, 600Volts) The Nell 8N60 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. thre
8N60(F,B,H) 8A mps,600 Volts N-CHANNEL MOSFET FEATURE 8A,600V,RDS(ON)=1.0Ω@VGS=10V/4A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 8N60 ITO-220AB 8N60F TO-263 8N60B TO-262 8N60H Absolute Maximum Ratings(TC=25℃,unl
UNISONIC TECHNOLOGIES CO., LTD 8N65K-MT Preliminary 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MT is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged aval
UNISONIC TECHNOLOGIES CO., LTD 8N60K-MT 8A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche ch
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