80NT3 전자부품 데이터시트

High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J

STP80NF75L STB80NF75L STB80NF75L-1 N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK STripFET™ II POWER MOSFET TYPE STP80NF75L STB80NF75L STB80NF75L-1 s s s s VDSS 75 V 75 V 75 V RDS(on) <0.01 Ω <0.01 Ω <0.01 Ω ID 80 A 80 A 80 A 3 1 3 12 TYPICAL RDS(on) = 0.008 Ω EXCEPTIONAL dv/dt CAP

DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N055CLE, NP80N055DLE, NP80N055ELE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION These products are N-channel MOS Field Effect www.DataSheet4UT.rcaonmsistor designed for high current switching applications. FEATURES • Channel temperature 17

Preliminary data HiPerFASTTM IGBT IXGK80N60A VCES IC25 VCE(sat) tfi = 600 V = 80 A = 2.7 V = 275 ns Symbol VCES VCGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150 °C TJ = 25° C to 150°C; R GE = 1 M Ω Continuous Tra

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 80N06 ·DESCRIPTION ·Drain Current ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PA

UNISONIC TECHNOLOGIES CO., LTD 80N08 Preliminary Power MOSFET N-CHANNEL 80V (D-S) MOSFET „ DESCRIPTION The UTC 80N08 is an N-channel MOSFET using UTC trench technology. It can be used in applications, such as power supply (secondary synchronous rectification), industrial and primary switch etc.