Datasheet 80N60B Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	80N60B	High Current IGBT High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES = IC25 = =VCE(sat) 600 V 160 A 2.5 V Symbol V CES VCGR V CES VGEM I C25 IC90 I L(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions Maximum Ratings T J	IXYS

80N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
80NF70	STP80NF70 STP80NF70 N-channel 68 V, 0.0082 Ω , 98 A, TO-220 STripFET™ II Power MOSFET Features Type STP80NF70 ■ ■ VDSS 68 V RDS(on) max < 0.0098 Ω ID 98 A Exceptional dv/dt capability 100% avalanche tested 1 3 2 Application ■ TO-220 Switching applications Description Th	ST Microelectronics
80N70F4	STP80N70F4 STP80N70F4 N-channel 68 V, 8.2 mΩ typ., 85 A STripFET™ DeepGATE™ Power MOSFET in TO-220 package Datasheet — production data Features Order code STP80N70F4 VDSS 68 V RDS(on) max < 9.8 mΩ ID 85 A ■ N-channel enhancement mode ■ 100% avalanched rated ■ Low gate ch	STMicroelectronics
80N60	N-Channel Enhancement Mode Field Effect Transistor CMP80N06/CMB80N06/CMI80N06 N-Channel Enhancement Mode Field Effect Transistor General Description Product Summery The 80N06 is N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. Feat	Cmos

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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