8090
Infineon Technologies AG
LDMOS RF Power Field Effect TransistorPTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
Features
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent
8090
Infineon Technologies AG
LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHzPTF080901
LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz
Description
The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifet