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8090  

Infineon Technologies AG
Infineon Technologies AG

8090

LDMOS RF Power Field Effect Transistor

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description Features The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent



8090  

Infineon Technologies AG
Infineon Technologies AG

8090

LDMOS RF Power Field Effect Transistor 90 W/ 869-960 MHz

PTF080901 LDMOS RF Power Field Effect Transistor 90 W, 869–960 MHz Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifet



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