74VHC03
STMicroelectronics
QUAD 2-INPUT OPEN DRAIN NAND GATE74VHC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
s HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 2 µA (MAX.) at TA=25°C
s HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
)s POWER DOWN PROTECTION ON INPUTS t(ss OPERATING VOLTAGE R
74VHC03M
STMicroelectronics
QUAD 2-INPUT OPEN DRAIN NAND GATE74VHC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
s HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 2 µA (MAX.) at TA=25°C
s HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
)s POWER DOWN PROTECTION ON INPUTS t(ss OPERATING VOLTAGE R
74VHC03T
STMicroelectronics
QUAD 2-INPUT OPEN DRAIN NAND GATE74VHC03
QUAD 2-INPUT OPEN DRAIN NAND GATE
s HIGH SPEED: tPD = 3.7ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 2 µA (MAX.) at TA=25°C
s HIGH NOISE IMMUNITY:
VNIH = VNIL = 28% VCC (MIN.)
)s POWER DOWN PROTECTION ON INPUTS t(ss OPERATING VOLTAGE R