74H1G66S
STMicroelectronics
SINGLE BILATERAL SWITCH®
74H1G66
SINGLE BILATERAL SWITCH
s s
s
s
s
s
HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) LOW ”ON” RESISTANCE RON = 50Ω (TYP.)AT VCC=9V II/O=1
74H1G66
SINGLE BILATERAL SWITCH®
74H1G66
SINGLE BILATERAL SWITCH
s s
s
s
s
s
HIGH SPEED: tPD = 4 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = 25 oC HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) LOW ”ON” RESISTANCE RON = 50Ω (TYP.)AT VCC=9V II/O=100µA SINE WAVE DISTORTION 0.042% (TYP.)
STMicroelectronics
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