파트넘버.co.kr 6N60G 데이터시트 검색

6N60G 전자부품 데이터시트



6N60G 전자부품 회로 및
기능 검색 결과



6N60G  

nELL
nELL

6N60G

N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown




관련 부품 6N6 상세설명

6N65Z-Q  

  
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N65Z-Q 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65Z-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power



Unisonic Technologies
Unisonic Technologies

PDF



6N60F  

  
N-CHANNEL MOSFET

6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unl



CHONGQING PINGYANG
CHONGQING PINGYANG

PDF



6N65Z  

  
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N65Z 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOS



Unisonic Technologies
Unisonic Technologies

PDF



6N65-P  

  
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 6N65-P 6.2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N65-P is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power M



Unisonic Technologies
Unisonic Technologies

PDF



6N60B  

  
N-CHANNEL MOSFET

6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unl



CHONGQING PINGYANG
CHONGQING PINGYANG

PDF



6N60H  

  
N-CHANNEL MOSFET

6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE  6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unl



CHONGQING PINGYANG
CHONGQING PINGYANG

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처