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UNISONIC TECHNOLOGIES CO., LTD 6N65Z-Q 6.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65Z-Q is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power
6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unl
UNISONIC TECHNOLOGIES CO., LTD 6N65Z 6.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOS
UNISONIC TECHNOLOGIES CO., LTD 6N65-P 6.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65-P is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power M
6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unl
6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unl
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