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6AM14  

Hitachi Semiconductor
Hitachi Semiconductor

6AM14

Silicon N-Channel/P-Channel Power MOS FET Array

6AM14 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • • • • Low on-resistance Low drive current High speed switching High density mounting Outline 6AM14 Absolute Maximum Ratings (Ta = 25°C) Ratings




관련 부품 6AM 상세설명

6AM11  

  
Silicon N-channel/p-channel Power MOS Fet Array

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i



Renesas
Renesas

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6AM13  

  
Silicon N-Channel/P-Channel Complementary Power MOS FET Array

6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A • Capab



Hitachi Semiconductor
Hitachi Semiconductor

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6AM12  

  
Silicon N-channel/p-channel Complementary Power MOS Fet Array

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i



Renesas
Renesas

PDF



6AM15  

  
Silicon N/P Channel MOS FET High Speed Power Switching

6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features • Low on-resistance N Channel : RDS(on) = 0.045 Ω typ. P Channel : RDS(on) = 0.085 Ω typ. High speed switching 4 V gate drive device can be driven from 5 V source High density moun



Hitachi Semiconductor
Hitachi Semiconductor

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