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Datasheet 60N10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 60N10 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
60N10
·DESCRIPTION ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARA |
 Inchange Semiconductor |
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| 1 | 60N100D | FGL60N100D FGL60N100D
IGBT
FGL60N100D
General Description
Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in conduction and switching to planar gate structure, and also have wide noise immunity. These devices are well suitable for IH applications
Features
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 Fairchild Semiconductor |
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