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Datasheet 5N3011P Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 5N3011P | H5N3011P H5N3011P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P
D
G
S
1 2 3
Absolute Maximum Ratings
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode |  Renesas | data |
5N3 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 5N30 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
5N30
·DESCRIPTION ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 300V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAME  Inchange Semiconductor mosfet | | |
| 2 | 5N3011P | H5N3011P H5N3011P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P
D
G
S
1 2 3
Absolute Maximum Ratings
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode Renesas data | |
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