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Datasheet 50N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 50N60 | IXRH50N60 Advanced Technical Information
IGBT with Reverse Blocking capability
IXRH 50N80 IXRH 50N60
VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns
TO-247 AD
G C E
C G
C (TAB) C = Collector, TAB = Collector
E G = Gate, E = Emitter,
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC |
 IXYS |
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| 1 | 50N60T | IKW50N60T TrenchStop® Series
IKW50N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
C
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit |
 Infineon |
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