파트넘버.co.kr 50N10 데이터시트 검색

50N10 전자부품 데이터시트



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50N10  

IXYS Corporation
IXYS Corporation

50N10

IXFK150N10

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFK100N10 IXFN150N10 ID25 RDS(on) 12 mW 12 mW 100 V 100 A 100 V 150 A trr £ 200 ns TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 ID120 IDM IAR EAR dv/dt PD T




관련 부품 50N 상세설명

50N06F  

  
N-CHANNEL MOSFET

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25



CHONGQING PINGYANG
CHONGQING PINGYANG

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50N30C  

  
N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. th



nELL
nELL

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50N06H  

  
N-CHANNEL MOSFET

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25



CHONGQING PINGYANG
CHONGQING PINGYANG

PDF



50N06B  

  
N-CHANNEL MOSFET

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25



CHONGQING PINGYANG
CHONGQING PINGYANG

PDF



50N06-F  

  
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary 50 Amps, 60 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max th



Unisonic Technologies
Unisonic Technologies

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50N20  

  
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N20 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PAR



Inchange Semiconductor
Inchange Semiconductor

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