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50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25
SEMICONDUCTOR 50N30 Series N-Channel Power MOSFET 50A, 300Volts RoHS RoHS Nell High Power Products DESCRIPTION The Nell 50N30 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 300V, and max. th
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25
UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max th
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N20 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PAR
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