50N06
ETC
Low voltage high current power MOS FET50N06
* '6
72
Available
RoHS*
COMPLIANT
'
* 6
VDS ID VGS PD TJ Tstg EAS
52.4
Ciss Coss Crss
VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ
特性参数值(TC=25ºC)
参数说明 漏源反向电压 漏源截止电流
50N06
CHONGQING PINGYANG
N-CHANNEL MOSFET50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 50N06
ITO-220AB 50N06F
TO-263 50N06B
TO-262
50N06
KIA
N-CHANNEL MOSFETKIA
50 Amps, 60 Volts N-CHANNEL MOSFET 销售电话:13641469108廖先生 QQ:543158798
50N06
SEMICONDUCTORS
1.Description
The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state res
50N06
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
50N06
·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 60V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUTE
50N06
Unisonic Technologies
N-CHANNEL POWER MOSFETUNISONIC TECHNOLOGIES CO., LTD 50N06
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltag
50N06
Tuofeng Semiconductor
Power-TransistorShenzhen Tuofeng Semiconductor Technology Co., Ltd
50N06
Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead platin
50N06-F
Unisonic Technologies
N-CHANNEL POWER MOSFETUNISONIC TECHNOLOGIES CO., LTD
50N06-F
Preliminary
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, bre
50N06B
CHONGQING PINGYANG
N-CHANNEL MOSFET50N06(F,B,H)
50A mps,60 Volts N-CHANNEL MOSFET
FEATURE
50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability
TO-220AB 50N06
ITO-220AB 50N06F
TO-263 50N06B
TO-262