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50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25
50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE 50A,60V,RDS(ON)=16mΩ@VGS=10V/25A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25
UNISONIC TECHNOLOGIES CO., LTD 50N06-F Preliminary 50 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 50N06-F is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max th
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS
New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V ID (A)a, e 89 80 Qg (Typ) 30 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion
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