4N90
Inchange Semiconductor
N-Channel MOSFET TransistorINCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N90
·DESCRIPTION ·Drain Current ID= 3.6A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 900V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
ABSOLUT
4N90
Unisonic Technologies
N-CHANNEL POWER MOSFETUNISONIC TECHNOLOGIES CO., LTD 4N90
4 Amps, 900 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N90 is a N-channel enhancement MOSFET adopting UTC’s advanced technology to provide customers with DMOS, planar stripe technology. This technology is design
4N90C
Fairchild Semiconductor
FQP4N90CFQP4N90C / FQPF4N90C — N-Channel QFET® MOSFET
FQP4N90C / FQPF4N90C
N-Channel QFET® MOSFET
900 V, 4.0 A, 4.2 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar strip