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4A, 600V, N沟道功率场效应晶体管【产品参数规格书】 工业型号 FQU4N60 FQD4N60 公司型号 通俗命名 H H4N60I H4N60S 4N60 HAOHAI 封装 标识 N-Channel Power Field Effect Transistoe 英文与中文简体版本 无铅产品提供SGS环保认证, 符合欧美RoHS环保
UNISONIC TECHNOLOGIES CO., LTD 4N60-Q 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-Q is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
4A, 600V, N沟道功率场效应晶体管【产品参数规格书】 工业型号 FQU4N60 FQD4N60 公司型号 通俗命名 H H4N60I H4N60S 4N60 HAOHAI 封装 标识 N-Channel Power Field Effect Transistoe 英文与中文简体版本 无铅产品提供SGS环保认证, 符合欧美RoHS环保
UNISONIC TECHNOLOGIES CO., LTD 4N60K-MT Preliminary 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanc
UNISONIC TECHNOLOGIES CO., LTD 4N60K-MK Preliminary 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MK is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanc
UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche c
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