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Datasheet 4N45 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
4 | 4N45 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N45
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER |
Inchange Semiconductor |
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3 | 4N45 | High Gain Darlington Output Optocouplers High Gain Darlington Output Optocouplers Technical Data
4N45 4N46 Features
• High Current Transfer Ratio–1500% Typical • Low Input Current Requirement–0.5 mA • Performance Guaranteed over 0°C to 70°C Temperature Range • Internal Base-Emitter Resistor Minimizes Output Leakage • Gain-B |
Agilent(Hewlett-Packard) |
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2 | 4N45300 | High Gain Darlington Output Optocouplers High Gain Darlington Output Optocouplers Technical Data
4N45 4N46 Features
• High Current Transfer Ratio–1500% Typical • Low Input Current Requirement–0.5 mA • Performance Guaranteed over 0°C to 70°C Temperature Range • Internal Base-Emitter Resistor Minimizes Output Leakage • Gain-B |
Agilent(Hewlett-Packard) |
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1 | 4N45500 | High Gain Darlington Output Optocouplers High Gain Darlington Output Optocouplers Technical Data
4N45 4N46 Features
• High Current Transfer Ratio–1500% Typical • Low Input Current Requirement–0.5 mA • Performance Guaranteed over 0°C to 70°C Temperature Range • Internal Base-Emitter Resistor Minimizes Output Leakage • Gain-B |
Agilent(Hewlett-Packard) |
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Número de pieza | Descripción | Fabricantes | |
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