파트넘버.co.kr 4AK23 데이터시트 검색

4AK23 전자부품 데이터시트



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기능 검색 결과



4AK23  

Hitachi Semiconductor
Hitachi Semiconductor

4AK23

Silicon N-Channel Power MOS FET Array

4AK23 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A • Low drive current • High speed switching • High density mounting • Suitable for H-bridged moto




관련 부품 4AK 상세설명

4AK22  

  
Silicon N-Channel Power MOS FET Array

4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting �



Hitachi Semiconductor
Hitachi Semiconductor

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4AK20  

  
Silicon N-Channel Power MOS FET Array

4AK20 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.25 , VGS = 10 V, I D = 2.5 A R DS(on) 0.35 , VGS = 4 V, I D = 2.5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting �



Hitachi Semiconductor
Hitachi Semiconductor

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4AK18  

  
Silicon N-Channel Power MOS FET Array

4AK18 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.38 , VGS = 10 V, I D = 1 A R DS(on) ≤ 0.53 , VGS = 4 V, I D = 1 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mountin



Hitachi Semiconductor
Hitachi Semiconductor

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4AK27  

  
Silicon N Channel MOS FET High Speed Power Switching

4AK27 Silicon N Channel MOS FET High Speed Power Switching ADE-208-728 (Z) 1st. Edition January 1999 Features • Low on-resistance R DS(on) ≤ 0.15Ω, VGS = 10V, ID = 3.0A • 4V gate drive devices. • High density mounting Outline SP-10 3 D 2G 4 G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1



Hitachi Semiconductor
Hitachi Semiconductor

PDF



4AK26  

  
Silicon N-Channel Power MOS FET Array

4AK26 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) ≤ 0.06 , VGS = 10 V, I D = 5 A R DS(on) ≤ 0.075 , VGS = 4 V, I D = 5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounti



Hitachi Semiconductor
Hitachi Semiconductor

PDF



4AK25  

  
Silicon N-Channel Power MOS FET Array

4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S



Hitachi Semiconductor
Hitachi Semiconductor

PDF




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