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40NSR 전자부품 데이터시트



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40NSR  

Naina Semiconductor
Naina Semiconductor

40NSR

Standard Recovery Diodes

Naina Semiconductor emiconductor Ltd. Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Metric and UNF thread type 40NS 40NS(R) Standard Recovery Diodes (Stud and Lead Type) Electrical Specifications (TE = 25




관련 부품 40N 상세설명

40NTT  

  
Thyristor-Thyristor Modules

Naina Semiconductor emiconductor Ltd. Thyristor – Thyristor Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 40NTT Maximum Ratings (TA = 250C unless otherwise noted)



Naina Semiconductor
Naina Semiconductor

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40NTD  

  
Thyristor-Diode Modules

Naina Semiconductor emiconductor Ltd. Thyristor – Diode Module Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance 40NTD Maximum Ratings (TA = 250C unless otherwise noted) Par



Naina Semiconductor
Naina Semiconductor

PDF



40NSFR  

  
Fast Recovery Diodes

Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 40NSF(R) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IF



Naina Semiconductor
Naina Semiconductor

PDF



40NSF  

  
Fast Recovery Diodes

Naina Semiconductor emiconductor Ltd. Fast Recovery Diodes (Stud Version) Features • Diffused Series • Industrial grade • Available in Normal and Reverse polarity • Optional Avalanche Characteristic 40NSF(R) Electrical Specifications (TE = 250C, unless otherwise noted) Symbol IF(AV) VFM IF



Naina Semiconductor
Naina Semiconductor

PDF



40N10H  

  
N-CHANNEL MOSFET

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=2



CHONGQING PINGYANG
CHONGQING PINGYANG

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40N10F  

  
N-CHANNEL MOSFET

40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE  40A,100V,RDS(ON)=40mΩ@VGS=10V/20A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=2



CHONGQING PINGYANG
CHONGQING PINGYANG

PDF




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