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40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=2
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=2
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 40N15 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.08Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conve
UNISONIC TECHNOLOGIES CO., LTD 40N15 Preliminary Power MOSFET 40A, 150V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 40N15 is an N-channel enhancement MOSFET, it uses UTC’s advanc ed techn ology to provide th e customers with perfect RDS(ON), hig h sw itching spe ed, high current capacity a n
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 40N10 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conve
40N10(F,B,H) 40A mps,100 Volts N-CHANNEL MOSFET FEATURE 40A,100V,RDS(ON)=40mΩ@VGS=10V/20A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 40N10 ITO-220AB 40N10F TO-263 40N10B TO-262 40N10H Absolute Maximum Ratings(TC=2
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