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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 40N05 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conve
N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 www.din-tek.jp DTU40N06 FEATURES ID (A) 40 rDS(on) (W) 0.016 @ VGS = 10 V D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature D 100% Rg Tested TO-252 D G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 40N06 ·FEATURES ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.035Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conve
Advanced Power Electronics Corp. AP40N03GP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement Low Gate Charge D Fast Switching Performance RoHS-compliant, halogen-free G S BV DSS RDS(ON) ID 30V 17mΩ 40A Description Advanced Power MOSFETs from APEC provide the designer
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