파트넘버.co.kr 3SK322 데이터시트 검색

3SK322 전자부품 데이터시트



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3SK322  

Hitachi Semiconductor
Hitachi Semiconductor

3SK322

Silicon N-Channel Dual Gate MOS FET

3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A (Z) 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(




관련 부품 3SK3 상세설명

3SK321  

  
Silicon N-Channel Dual Gate MOS FET

3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A (Z) 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.) Outline MPAK-4R 3 4 2 1 1. So



Hitachi Semiconductor
Hitachi Semiconductor

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3SK320  

  
N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP/ MIX)



Toshiba Semiconductor
Toshiba Semiconductor

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3SK319  

  
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602(Z) 1st. Edition February 1998 Features • Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) • Excellent cross modulation characteristics • Capable low voltage operation; +B= 5V Outline MPAK-4 2 3 1 4 1. Source



Hitachi Semiconductor
Hitachi Semiconductor

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3SK317  

  
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-778 (Z) 1st. Edition Mar. 1999 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics ; (PG = 27.6 dB typ. at f = 200 MHz) Outline CMPAK-4 2 3 1 4 1. Source 2. Gate1 3



Hitachi Semiconductor
Hitachi Semiconductor

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3SK309  

  
GaAs N Channel Dual Gate MES FET UHF RF Amplifier

3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz) Outline CMPAK–4



Hitachi Semiconductor
Hitachi Semiconductor

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3SK300  

  
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier

3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK300 Absolute Maximum Ratings (T



Hitachi Semiconductor
Hitachi Semiconductor

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