3SK299
NEC
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLDDATA SHEET
MES FIELD EFFECT TRANSISTOR
3SK299
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
FEATURES
• Suitable for use as RF amplifier in UHF TV tuner. • Low Crss : 0.02 pF TYP. • High GPS : 20 dB
3SK254
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLDDATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK254
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
FEATURES
• Low VDD Use • Driving Battery : (VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) • High Power Gain : GPS
NEC
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3SK252
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLDDATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK252
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
FEATURES
• Low VDD Use • Driving Battery
0.1 0.4 + – 0.05
:
(VDS = 3.5 V) NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz) GPS = 19.0
NEC
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3SK298
Silicon N-Channel Dual Gate MOS FET3SK298
Silicon N-Channel Dual Gate MOS FET
ADE-208-390 1st. Edition
Application
UHF / VHF RF amplifier
Features
• Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation
Outline
CMPAK–4
2 3 4 1 1. Source 2. Gate1 3. Gate2 4. Drain
3SK298
Absolute Maximum Rati
Hitachi Semiconductor
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