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3SK239A 전자부품 데이터시트
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3SK239A 전자부품 회로 및
기능 검색 결과
3SK239A
Hitachi Semiconductor
GaAs Dual Gate MES FET
3SK239A
GaAs Dual Gate MES FET
Application
UHF RF amplifier
Features
• Excellent low noise characteristics (NF = 1.3 dB Typ at f = 900 MHz) • Capable of low voltage operation
Outline
3SK239A
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source vo
관련 부품 3SK23 상세설명
3SK233
Silicon N-Channel Dual Gate MOS FET
Hitachi Semiconductor
PDF
Silicon N-Channel Dual Gate MOS FET
3SK233 Silicon N Channel Dual Gate MOS FET UHF TV Tuner RF Amplifier Feature • Low voltage operation. • Superior cross modulation characteristics. Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————– Drai
Hitachi Semiconductor
3SK231
MOS FIELD EFFECT TRANSISTOR
NEC
PDF
MOS FIELD EFFECT TRANSISTOR
DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK231 RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • Low Noise Figure • High Power Gain • Enhancement Typ. 0.4 −0.05 +0.1 NF = 2.0 dB TYP. (@ = 900 MHz) Gps = 17.5 dB TYP. (@ = 900 MHz)
NEC
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PartNumber.co.kr | 2020 | 연락처 |