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Datasheet 3SK231 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3SK231 | MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK231
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
FEATURES
• Low Noise Figure • High Power Gain • Enhancement Typ.
0.4 −0.05
+0.1
NF = 2.0 dB TYP. (@ = 900 MHz) Gps = 17.5 dB TYP. (@ = 900 MHz)
|  NEC | transistor |
3SK Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3SK103 | Silicon N-Channel Dual Gate MOS FET ETC gate | | |
| 2 | 3SK121 | MOS FET Toshiba data | | |
| 3 | 3SK122 | MOS Field Effect Transistor w
w
w
.d
e e h s a t a
. u t4
m o c
NEC transistor | | |
| 4 | 3SK126 | N CHANNEL DUAL GATE MOS TYPE (TY TUNER/ VHF RF AMPLIFIER/ TV TUNER VHF MIXER APPLICATIONS) Toshiba Semiconductor amplifier | | |
| 5 | 3SK127 | N CHANNEL DUAL GATE MOS TYPE (TV TUNER/ UHF RF AMPLIFIER/ UHF MIXER APPLICATIONS) Toshiba Semiconductor amplifier | | |
| 6 | 3SK131 | MOS FIELD EFFECT TRANSISTOR DATA SHEET SHEET DATA
MOS FIELD EFFECT TRANSISTOR
3SK131
RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
FEATURES
• Suitable for use as RF amplifier in VHF TV tuner. • Low Crss : 0.05 pF TYP. • High Gps : 23 dB TYP. • Low NF : 1.3 dB TYP.
P NEC transistor | | |
| 7 | 3SK134B | RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK134B
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
FEATURES
• High Power Gain : • Low Noise Figure : Gps = 23.0 dB TYP. (@ = 900 MHz) NF = 2.4 dB TYP. (@ = 900 MHz)
PACKAGE DIMENSIONS (Unit : mm)
2. NEC transistor | |
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