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Datasheet 3N172 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
13N172Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch

Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION • High Input Impedance • Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . .
Calogic  LLC
Calogic LLC
mosfet
23N172Trans MOSFET N-CH 25V 0.03A

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
33N172-73Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch

Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION • High Input Impedance • Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . .
Calogic  LLC
Calogic LLC
mosfet


3N1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
13N100EMTB3N100E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package whi
Motorola Semiconductors
Motorola Semiconductors
data
23N121Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
33N123Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
43N128MOSFET AMPLIFIER

MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs vDg vgs id Pd Tj, Tstg Value + 20 + 20 ±10 50 330 2.2 -65 to +175 Unit Vdc Vdc Vdc
Motorola Semiconductors
Motorola Semiconductors
amplifier
53N128Silicon MOS Transistor

General Electric Solid State
General Electric Solid State
transistor
63N128Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
mosfet
73N129Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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