3N165-6
Linear Integrated Systems
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (
3N165
Amplifier3N165 P-CHANNEL MOSFET
The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temp
Micross
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3N165
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose AmplifierMonolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
• Very High Impedance • High Gate Breakdown • Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate
Calogic LLC
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3N165
MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltag
Linear Integrated Systems
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