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Datasheet 3N165 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 3N165 | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier
3N165 / 3N166
FEATURES
CORPORATION
• Very High Impedance • High Gate Breakdown • Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate |
 Calogic LLC |
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| 4 | 3N165 | MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET 3N165, 3N166
MONOLITHIC DUAL P-CHANNEL
Linear Integrated Systems
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2) 3N165 3N166 Transient G-S Voltag |
 Linear Integrated Systems |
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| 3 | 3N165 | Amplifier 3N165 P-CHANNEL MOSFET
The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet
FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temp |
 Micross |
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| 2 | 3N165 | Trans MOSFET P-CH 40V 0.05A |
 New Jersey Semiconductor |
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