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Datasheet 3N163 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 3N163 | P-CHANNEL ENHANCEMENT MODE 3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transi |
 Linear Integrated Systems |
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| 3 | 3N163 | High Speed Switch 3N163 P-CHANNEL MOSFET
The 3N163 is an enhancement mode P-Channel Mosfet
The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. FEATURES |
 Micross |
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| 2 | 3N163 | Trans MOSFET P-CH 40V 0.05A 4-Pin TO-72 |
 New Jersey Semiconductor |
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| 1 | 3N163-4 | P-CHANNEL ENHANCEMENT MODE 3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transi |
Linear Integrated Systems |
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