3EZ11
TRSYS
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID le
3EZ11
Pan Jit International Inc.
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)DATA SHEET
3EZ11~3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts
FEATURES
• Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above
3EZ11
Diotec Semiconductor
Silicon-Power-Z-Diodes (non-planar technology)3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weigh
3EZ110
TRSYS
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE3EZ11 THRU 3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE - 11 TO 200 Volts Power - 3.0 Watts
FEATURES l l l l l l l l Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent clamping capability Typical ID le
3EZ110
Pan Jit International Inc.
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES(VOLTAGE- 11 to 200 Volts Power - 3.0 Watts)DATA SHEET
3EZ11~3EZ200
GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE- 11 to 200 Volts Power - 3.0 Watts
FEATURES
• Low profile package • Built-in strain relief • Glass passivated iunction • Low inductance • Typical ID less than 1.0µA above
3EZ110
Diotec Semiconductor
Silicon-Power-Z-Diodes (non-planar technology)3EZ 1 … 3EZ 200 (3 W) Silicon-Power-Z-Diodes (non-planar technology) Silizium-Leistungs-Z-Dioden (flächendiffundierte Dioden)
Maximum power dissipation Maximale Verlustleistung Nominal Z-voltage – Nominale Z-Spannung Plastic case Kunststoffgehäuse Weigh
3EZ110D10
EIC
SILICON ZENER DIODESCertificate TH97/10561QM
Certificate TW00/17276EM
3EZ3.9D10 ~ 3EZ200D10
SILICON ZENER DIODES
VZ : 3.9 - 200 Volts PD : 3 Watts
DO - 41
FEATURES :
* Complete Voltage Range 3.9 to 200 Volts * High peak reverse power dissipation * High reliability * Low lea