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Datasheet 3DG130 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 3DG130 | NPN Silicon High Frequency Middle Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DG130
NPN Silicon High Frequency Middle Power Transistor
Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for |
 Shaanxi Qunli |
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| 1 | 3DG13007 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 2.0(Max) @ IC= 5.0A ·Switching Time
: tf= 0.9μs(Max.)@ IC= 5.0A
APPLICATIONS ·Designed for use in high-voltage, high- |
 Inchange Semiconductor |
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