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Datasheet 3DD5024 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3DD5024 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Built-in Damper Diode
APPLICATIONS ·Horizontal deflection output for TV, CRT monitor
applicaitions.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAME |  Inchange Semiconductor | transistor |
| 2 | 3DD5024 | CASE-RATED BIPOLAR TRANSISTOR 低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5308DHF FOR LOW FREQUENCY AMPLIFICATION
R
3DD5024(P)
主要参数
BVCBO IC VCE(sat) tf
MAIN CHARACTERISTICS
1500V 8.0 A 3.0V(max) 1.0 μs(max)
封装 Package TO-220HF
用途
彩色电视机行输出电 路
APPLIC |  JILIN SINO-MICROELECTRONICS | transistor |
| 3 | 3DD5024A | CASE-RATED BIPOLAR TRANSISTOR R
µÍÆ·Å´ó¹Ü¿Ç¶î¨ÄË«¼Ð;§Ìå CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5024A FOR LOW FREQUENCY
3DD5024A
Ö÷Òª²ÎÊý BVCBO IC VCE(sat) tf ÓÃ;
z ²ÊÉ«µçÊÓ»úÐä³öµç·
MAIN CHARACTERISTICS
1500 V 8 3 0.6 A V(max) ¦Ì s(max)
·â×°
Package TO-220HF
| JILIN SINO-MICROELECTRONICS | transistor |
| 4 | 3DD5024P | CASE-RATED BIPOLAR TRANSISTOR 低频放大管壳额定的双极型晶体管 CASE-RATED BIPOLAR TRANSISTOR 3DD5024P FOR LOW FREQUENCY AMPLIFICATION
R
3DD5024P
主要参数 MAIN CHARACTERISTICS
BVCBO IC VCE(sat) tf
1500V 8.0 A 3.0V(max) 1.0 μs(max)
封装 Package TO-220HF
用途
z 彩色电视机行输出电 路
APPLICATION |  JILIN SINO | transistor |
3DD Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3DD10 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD10, 3DD11
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th  Shaanxi Qunli Electric transistor | | |
| 2 | 3DD100 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. Shaanxi Qunli Electric transistor | | |
| 3 | 3DD101 | NPN Silicon Low Frequency High Power Transistor Shaanxi Qunli Electric Co., Ltd
Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China
3DD100, 3DD101, 3DD102
NPN Silicon Low Frequency High Power Transistor
Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability. Shaanxi Qunli Electric transistor | | |
| 4 | 3DD101 | (3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
 ETC data | | |
| 5 | 3DD101A | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101A
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min.) ·DC Current Gain-
: hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS ·Desi Inchange Semiconductor transistor | | |
| 6 | 3DD101A | Discrete semiconductor devices power transistor Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
 SJ transistor | | |
| 7 | 3DD101A | (3DD101 / 3DD102) NPN Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
Free Datasheet http://www.Datasheet4U.com
ETC data | |
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