3DD15C 전자부품 데이터시트

产品概述 3DD13003 H8D 是硅 NPN 型功率晶体管，该产品 采用平面工艺，有源区采用 反覆盖结构，保证足够的电 流特性；终端采用分压环结 构，保证合适的击穿电压。 硅三重扩散 NPN 双极型晶体管 3DD13003 H8D ○R 产品特点 ● 电流

Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13007 FEATURES Power dissipation PCM: 2 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER TRANSISTOR (NPN) TO-220 aSheet4U.com Collector current 8 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junctio

SMD Type NPN Transistors 3DD13002 Transistors ■ Features ● Collector Current Capability IC=1A ● Collector Emitter Voltage VCEO=400V ● Power Switching Applications 1.70 0.1 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Bas

3DD13005 Elektronische Bauelemente 4A , 700V NPN Plastic-Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Power switching applications TO-220J ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Volt

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.

MJE13003F6(3DD13003F6) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。 Purpose: High frequency electronic lighting ballast applications，converters, inverters, switching regulators, etc. 极限参数/Abs